Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 6
ProductPricingDatasheetFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / CaseStock & Quantity
S2M0080120D
SMC Diode Solutions
1
$1.2000
Datasheet
N-ChannelSiC (Silicon Carbide Junction Transistor)1200 V41A (Tc)20V100mOhm @ 20A, 20V4V @ 10mA54 nC @ 20 V+25V, -10V1324 pF @ 1000 V-231W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ADTO-247-3
100,000
Cart +
RFQ
S2M0080120K
SMC Diode Solutions
1
$1.2000
Datasheet
N-ChannelSiC (Silicon Carbide Junction Transistor)1200 V41A (Tc)20V100mOhm @ 20A, 20V4V @ 10mA54 nC @ 20 V+25V, -10V1324 pF @ 1000 V-231W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
100,000
Cart +
RFQ
S2M0040120D
SMC Diode Solutions
1
$1.2000
Datasheet
-SiC (Silicon Carbide Junction Transistor)1200 V----------Through HoleTO-247-3TO-247-3
100,000
Cart +
RFQ
S2M0040120K
SMC Diode Solutions
1
$1.2000
Datasheet
-SiC (Silicon Carbide Junction Transistor)1200 V----------Through HoleTO-247-4TO-247-4
100,000
Cart +
RFQ
S2M0025120D
SMC Diode Solutions
1
$1.2000
Datasheet
N-ChannelSiC (Silicon Carbide Junction Transistor)1200 V63A (Tj)20V34mOhm @ 50A, 20V4V @ 15mA130 nC @ 20 V+25V, -10V4402 pF @ 1000 V-446W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ADTO-247-3
100,000
Cart +
RFQ
S2M0025120K
SMC Diode Solutions
1
$1.2000
Datasheet
N-ChannelSiC (Silicon Carbide Junction Transistor)1200 V63A (Tc)20V34mOhm @ 50A, 20V4V @ 15mA130 nC @ 20 V+25V, -10V4402 pF @ 1000 V-446W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
100,000
Cart +
RFQ