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S2M0080120D
MOSFET SILICON CARBIDE SIC 1200V
Mfr. Part Number
S2M0080120D
Manufacturer
SMC Diode Solutions
Datasheet
Description
MOSFET SILICON CARBIDE SIC 1200V
RoHS Status
Lead Free / RoHS Complaint
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S2M0080120D
SMC Diode Solutions
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In Stock: 100,000
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S2M0080120D
SMC Diode Solutions
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1324 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
231W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
Brand Introduction

SMC Diode Solutions - Sangdest Microelectronic (Nanjing) Co., Ltd (SMC) was founded in 1997. SMC was previously the commercial fab for a major American high reliability (HI-REL) semiconductor firm. SMC’s products are sold for a variety of applications in the commercial market including LCD displays, telecom equipment, power supplies, industrial, and aircraft industries which have demanding reliability and quality requirements.

SMC manufactures and designs their own products which are widely accepted in both domestic and international markets. SMC follows rigorous qualification standards from large aerospace, communication, and consumer electronics suppliers that are known world-wide for both their superior products and within the industry for their exceptionally demanding supplier qualification teams. SMC is ISO9001, ISO14001 and IATF16949 qualified and offers AEC-Q101 certified products.

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