
Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 42,700
Product | Pricing | Datasheet | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Stock & Quantity |
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![]() EPC2218 EPC | 1 $4.7500 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 100 V | 60A (Ta) | 5V | 3.2mOhm @ 25A, 5V | 2.5V @ 7mA | 16.3 nC @ 5 V | +6V, -4V | 2703 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 2,383 Cart + RFQ |
![]() EPC2001C EPC | 1 $4.9300 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 100 V | 36A (Ta) | 5V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 9 nC @ 5 V | +6V, -4V | 900 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | Die | 8,546 Cart + RFQ |
![]() EPC2215 EPC | 1 $6.4400 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 200 V | 32A (Ta) | 5V | 8mOhm @ 20A, 5V | 2.5V @ 6mA | 17.7 nC @ 5 V | +6V, -4V | 1790 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 7,582 Cart + RFQ |
![]() EPC2010C EPC | 1 $6.8800 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 200 V | 22A (Ta) | 5V | 25mOhm @ 12A, 5V | 2.5V @ 3mA | 5.3 nC @ 5 V | +6V, -4V | 540 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (7-Solder Bar) | Die | 2,274 Cart + RFQ |
![]() EPC2206 EPC | 1 $6.4100 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 80 V | 90A (Ta) | 5V | 2.2mOhm @ 29A, 5V | 2.5V @ 13mA | 19 nC @ 5 V | +6V, -4V | 1940 pF @ 40 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 5,623 Cart + RFQ |
![]() EPC2031 EPC | 1 $6.6000 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 60 V | 31A (Ta) | - | 2.6mOhm @ 30A, 5V | 2.5V @ 15mA | 17 nC @ 5 V | - | 1800 pF @ 300 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 2,294 Cart + RFQ |
![]() EPC2029 EPC | 1 $6.7000 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 80 V | 48A (Ta) | 5V | 3.2mOhm @ 30A, 5V | 2.5V @ 12mA | 13 nC @ 5 V | +6V, -4V | 1410 pF @ 40 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 2,603 Cart + RFQ |
![]() EPC2021 EPC | 1 $7.9100 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 80 V | 90A (Ta) | 5V | 2.5mOhm @ 29A, 5V | 2.5V @ 14mA | 15 nC @ 5 V | +6V, -4V | 1650 pF @ 40 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 5,133 Cart + RFQ |
![]() EPC2032 EPC | 1 $7.1700 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 100 V | 48A (Ta) | 5V | 4mOhm @ 30A, 5V | 2.5V @ 11mA | 15 nC @ 5 V | +6V, -4V | 1530 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 7,856 Cart + RFQ |
![]() EPC2022 EPC | 1 $8.4600 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 100 V | 90A (Ta) | 5V | 3.2mOhm @ 25A, 5V | 2.5V @ 12mA | - | +6V, -4V | 1500 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 4,880 Cart + RFQ |
![]() EPC2024 EPC | 1 $7.6700 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 40 V | 90A (Ta) | 5V | 1.5mOhm @ 37A, 5V | 2.5V @ 19mA | - | +6V, -4V | 2100 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 8,832 Cart + RFQ |
![]() EPC2034C EPC | 1 $7.9800 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 200 V | 48A (Ta) | 5V | 8mOhm @ 20A, 5V | 2.5V @ 7mA | 11 nC @ 5 V | +6V, -4V | 1140 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 1,522 Cart + RFQ |
![]() SCT2750NYTB ROHM Semiconductor | 1 $7.3200 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5.9A (Tc) | 18V | 975mOhm @ 1.7A, 18V | 4V @ 630µA | 17 nC @ 18 V | +22V, -6V | 275 pF @ 800 V | - | 57W (Tc) | 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | 7,116 Cart + RFQ |
![]() EPC2033 EPC | 1 $8.6700 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 150 V | 48A (Ta) | - | 7mOhm @ 25A, 5V | 2.5V @ 9mA | 10 nC @ 5 V | - | 1140 pF @ 75 V | - | - | - | Surface Mount | Die | Die | 3,013 Cart + RFQ |
![]() SCT3080KLGC11 ROHM Semiconductor | 1 $22.1100 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 165W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 | 1,718 Cart + RFQ |
![]() SCT3030ALGC11 ROHM Semiconductor | 1 $32.6100 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 262W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 | 7,552 Cart + RFQ |
![]() SCT3030ARC14 ROHM Semiconductor | 1 $124.5000 100 $99.6000 500 $83.0000 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 262W | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | 2,500 Cart + RFQ |
![]() T2N7002AK,LM TAEC Product (Toshiba Electronic Devices and Storage Corporation) | 1 $0.1600 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35 nC @ 4.5 V | ±20V | 17 pF @ 10 V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | 8,377 Cart + RFQ |
![]() T2N7002BK,LM TAEC Product (Toshiba Electronic Devices and Storage Corporation) | 1 $0.1700 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | 9,065 Cart + RFQ |
![]() DMN67D8LW-13 Diodes Incorporated | 1 $0.2600 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 60 V | 240mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.82 nC @ 10 V | ±30V | 22 pF @ 25 V | - | 320mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 | 1,196 Cart + RFQ |