Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 42,700
ProductPricingDatasheetFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / CaseStock & Quantity
EPC2218
EPC
1
$4.7500
Datasheet
N-ChannelGaNFET (Gallium Nitride)100 V60A (Ta)5V3.2mOhm @ 25A, 5V2.5V @ 7mA16.3 nC @ 5 V+6V, -4V2703 pF @ 50 V---40°C ~ 150°C (TJ)Surface MountDieDie
2,383
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EPC2001C
EPC
1
$4.9300
Datasheet
N-ChannelGaNFET (Gallium Nitride)100 V36A (Ta)5V7mOhm @ 25A, 5V2.5V @ 5mA9 nC @ 5 V+6V, -4V900 pF @ 50 V---40°C ~ 150°C (TJ)Surface MountDie Outline (11-Solder Bar)Die
8,546
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EPC2215
EPC
1
$6.4400
Datasheet
N-ChannelGaNFET (Gallium Nitride)200 V32A (Ta)5V8mOhm @ 20A, 5V2.5V @ 6mA17.7 nC @ 5 V+6V, -4V1790 pF @ 100 V---40°C ~ 150°C (TJ)Surface MountDieDie
7,582
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EPC2010C
EPC
1
$6.8800
Datasheet
N-ChannelGaNFET (Gallium Nitride)200 V22A (Ta)5V25mOhm @ 12A, 5V2.5V @ 3mA5.3 nC @ 5 V+6V, -4V540 pF @ 100 V---40°C ~ 150°C (TJ)Surface MountDie Outline (7-Solder Bar)Die
2,274
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EPC2206
EPC
1
$6.4100
Datasheet
N-ChannelGaNFET (Gallium Nitride)80 V90A (Ta)5V2.2mOhm @ 29A, 5V2.5V @ 13mA19 nC @ 5 V+6V, -4V1940 pF @ 40 V---40°C ~ 150°C (TJ)Surface MountDieDie
5,623
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EPC2031
EPC
1
$6.6000
Datasheet
N-ChannelGaNFET (Gallium Nitride)60 V31A (Ta)-2.6mOhm @ 30A, 5V2.5V @ 15mA17 nC @ 5 V-1800 pF @ 300 V---40°C ~ 150°C (TJ)Surface MountDieDie
2,294
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EPC2029
EPC
1
$6.7000
Datasheet
N-ChannelGaNFET (Gallium Nitride)80 V48A (Ta)5V3.2mOhm @ 30A, 5V2.5V @ 12mA13 nC @ 5 V+6V, -4V1410 pF @ 40 V---40°C ~ 150°C (TJ)Surface MountDieDie
2,603
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EPC2021
EPC
1
$7.9100
Datasheet
N-ChannelGaNFET (Gallium Nitride)80 V90A (Ta)5V2.5mOhm @ 29A, 5V2.5V @ 14mA15 nC @ 5 V+6V, -4V1650 pF @ 40 V---40°C ~ 150°C (TJ)Surface MountDieDie
5,133
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EPC2032
EPC
1
$7.1700
Datasheet
N-ChannelGaNFET (Gallium Nitride)100 V48A (Ta)5V4mOhm @ 30A, 5V2.5V @ 11mA15 nC @ 5 V+6V, -4V1530 pF @ 50 V---40°C ~ 150°C (TJ)Surface MountDieDie
7,856
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EPC2022
EPC
1
$8.4600
Datasheet
N-ChannelGaNFET (Gallium Nitride)100 V90A (Ta)5V3.2mOhm @ 25A, 5V2.5V @ 12mA-+6V, -4V1500 pF @ 50 V---40°C ~ 150°C (TJ)Surface MountDieDie
4,880
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EPC2024
EPC
1
$7.6700
Datasheet
N-ChannelGaNFET (Gallium Nitride)40 V90A (Ta)5V1.5mOhm @ 37A, 5V2.5V @ 19mA-+6V, -4V2100 pF @ 20 V---40°C ~ 150°C (TJ)Surface MountDieDie
8,832
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RFQ
EPC2034C
EPC
1
$7.9800
Datasheet
N-ChannelGaNFET (Gallium Nitride)200 V48A (Ta)5V8mOhm @ 20A, 5V2.5V @ 7mA11 nC @ 5 V+6V, -4V1140 pF @ 100 V---40°C ~ 150°C (TJ)Surface MountDieDie
1,522
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RFQ
SCT2750NYTB
ROHM Semiconductor
1
$7.3200
Datasheet
N-ChannelSiCFET (Silicon Carbide)1700 V5.9A (Tc)18V975mOhm @ 1.7A, 18V4V @ 630µA17 nC @ 18 V+22V, -6V275 pF @ 800 V-57W (Tc)175°C (TJ)Surface MountTO-268TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
7,116
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EPC2033
EPC
1
$8.6700
Datasheet
N-ChannelGaNFET (Gallium Nitride)150 V48A (Ta)-7mOhm @ 25A, 5V2.5V @ 9mA10 nC @ 5 V-1140 pF @ 75 V---Surface MountDieDie
3,013
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SCT3080KLGC11
ROHM Semiconductor
1
$22.1100
Datasheet
N-ChannelSiCFET (Silicon Carbide)1200 V31A (Tc)18V104mOhm @ 10A, 18V5.6V @ 5mA60 nC @ 18 V+22V, -4V785 pF @ 800 V-165W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
1,718
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SCT3030ALGC11
ROHM Semiconductor
1
$32.6100
Datasheet
N-ChannelSiCFET (Silicon Carbide)650 V70A (Tc)18V39mOhm @ 27A, 18V5.6V @ 13.3mA104 nC @ 18 V+22V, -4V1526 pF @ 500 V-262W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
7,552
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SCT3030ARC14
ROHM Semiconductor
1
$124.5000
100
$99.6000
500
$83.0000
Datasheet
N-ChannelSiCFET (Silicon Carbide)650 V70A (Tc)18V39mOhm @ 27A, 18V5.6V @ 13.3mA104 nC @ 18 V+22V, -4V1526 pF @ 500 V-262W175°C (TJ)Through HoleTO-247-4LTO-247-4
2,500
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T2N7002AK,LM
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
1
$0.1600
Datasheet
N-ChannelMOSFET (Metal Oxide)60 V200mA (Ta)4.5V, 10V3.9Ohm @ 100mA, 10V2.1V @ 250µA0.35 nC @ 4.5 V±20V17 pF @ 10 V-320mW (Ta)150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
8,377
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T2N7002BK,LM
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
1
$0.1700
Datasheet
N-ChannelMOSFET (Metal Oxide)60 V400mA (Ta)4.5V, 10V1.5Ohm @ 100mA, 10V2.1V @ 250µA0.6 nC @ 4.5 V±20V40 pF @ 10 V-320mW (Ta)150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
9,065
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DMN67D8LW-13
Diodes Incorporated
1
$0.2600
Datasheet
N-ChannelMOSFET (Metal Oxide)60 V240mA (Ta)5V, 10V5Ohm @ 500mA, 10V2.5V @ 250µA0.82 nC @ 10 V±30V22 pF @ 25 V-320mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-323SC-70, SOT-323
1,196
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RFQ