EPC2206 | Yingxinyuan Int'l(Group) Ltd

• • • • EPC2206

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EPC2206

GANFET N-CH 80V 90A DIE

Mfr. Part Number

EPC2206

Manufacturer

EPC

Datasheet

Description

GANFET N-CH 80V 90A DIE

RoHS Status

Lead Free / RoHS Complaint

sample

Free Sample

In Stock: 5,623

Unit Price

$6.4100

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Reference Price

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1	$ 6.4100

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

80 V

Current - Continuous Drain (Id) @ 25°C

90A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 29A, 5V

Vgs(th) (Max) @ Id

2.5V @ 13mA

Gate Charge (Qg) (Max) @ Vgs

19 nC @ 5 V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

1940 pF @ 40 V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die

Brand Introduction

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.