Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 6
ProductPricingDatasheetFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / CaseStock & Quantity
GP2T080A120U
SemiQ
1
$12.4400
Datasheet
N-ChannelSiCFET (Silicon Carbide)1200 V35A (Tc)20V100mOhm @ 20A, 20V4V @ 10mA58 nC @ 20 V+25V, -10V1377 pF @ 1000 V-188W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
9,976
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RFQ
GP2T080A120H
SemiQ
1
$11.6200
Datasheet
N-ChannelSiCFET (Silicon Carbide)1200 V35A (Tc)20V100mOhm @ 20A, 20V4V @ 10mA61 nC @ 20 V+25V, -10V1377 pF @ 1000 V-188W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
2,341
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RFQ
GP2T040A120U
SemiQ
1
$21.8300
Datasheet
N-ChannelSiC (Silicon Carbide Junction Transistor)1200 V63A (Tc)20V52mOhm @ 40A, 20V4V @ 10mA118 nC @ 20 V+25V, -10V3192 pF @ 1000 V-322W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
7,533
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RFQ
GP2T040A120H
SemiQ
1
$22.2900
Datasheet
N-ChannelSiC (Silicon Carbide Junction Transistor)1200 V63A (Tc)20V52mOhm @ 40A, 20V4V @ 10mA118 nC @ 20 V+25V, -10V3192 pF @ 1000 V-322W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
1,702
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RFQ
GCMX080B120S1-E1
SemiQ
1
$23.3200
Datasheet
N-ChannelSiCFET (Silicon Carbide)1200 V30A (Tc)20V100mOhm @ 20A, 20V4V @ 10mA58 nC @ 20 V+25V, -10V1336 pF @ 1000 V-142W (Tc)-55°C ~ 175°C (TJ)Chassis MountSOT-227SOT-227-4, miniBLOC
2,912
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RFQ
GCMS080B120S1-E1
SemiQ
1
$25.9600
Datasheet
N-ChannelSiCFET (Silicon Carbide)1200 V30A (Tc)20V100mOhm @ 20A, 20V4V @ 10mA58 nC @ 20 V+25V, -10V1374 pF @ 1000 V-142W (Tc)-55°C ~ 175°C (TJ)Chassis MountSOT-227SOT-227-4, miniBLOC
5,541
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RFQ