Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 6
Product | Pricing | Datasheet | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GP2T080A120U SemiQ | 1 $12.4400 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1377 pF @ 1000 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 9,976 Cart + RFQ |
GP2T080A120H SemiQ | 1 $11.6200 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 61 nC @ 20 V | +25V, -10V | 1377 pF @ 1000 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | 2,341 Cart + RFQ |
GP2T040A120U SemiQ | 1 $21.8300 | Datasheet | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 118 nC @ 20 V | +25V, -10V | 3192 pF @ 1000 V | - | 322W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 7,533 Cart + RFQ |
GP2T040A120H SemiQ | 1 $22.2900 | Datasheet | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 118 nC @ 20 V | +25V, -10V | 3192 pF @ 1000 V | - | 322W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | 1,702 Cart + RFQ |
GCMX080B120S1-E1 SemiQ | 1 $23.3200 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1336 pF @ 1000 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC | 2,912 Cart + RFQ |
GCMS080B120S1-E1 SemiQ | 1 $25.9600 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1374 pF @ 1000 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC | 5,541 Cart + RFQ |