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GCMS080B120S1-E1
SIC 1200V 80M MOSFET & 10A SBD S
Mfr. Part Number
GCMS080B120S1-E1
Manufacturer
SemiQ
Datasheet
Description
SIC 1200V 80M MOSFET & 10A SBD S
RoHS Status
Lead Free / RoHS Complaint
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GCMS080B120S1-E1
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1374 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
142W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227
Package / Case
SOT-227-4, miniBLOC
Brand Introduction

SemiQ designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors as well as 150mm SiC epitaxial wafers. SiC Diodes and MOSFETs are available in both discrete and module form factors as well as bare die and wafer form. SemiQ also offers power conversion application expertise which includes sub system design and semi custom modules.

SemiQ serves the following end markets: Electric Vehicle Chargers and Charging Stations; Power Factor Correction (PFC); Output Rectification; Power Supplies including Server Farms; Solar Panel Inverters, Welding, Medical Equipment; and Motor Drives. SemiQ's manufacturing and engineering facilities are located in Lake Forest, California. The company is uniquely positioned with a fully redundant SiC supply chain.

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