Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 3
Product | Pricing | Datasheet | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Stock & Quantity |
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IV1Q12050T3 Inventchip Technology | 1 $39.2800 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 65mOhm @ 20A, 20V | 3.2V @ 6mA | 120 nC @ 20 V | +20V, -5V | 2770 pF @ 800 V | - | 327W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 5,050 Cart + RFQ |
IV1Q12050T4 Inventchip Technology | 1 $40.3400 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 65mOhm @ 20A, 20V | 3.2V @ 6mA | 120 nC @ 20 V | +20V, -5V | 2750 pF @ 800 V | - | 344W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | 2,340 Cart + RFQ |
IV1Q12160T4 Inventchip Technology | 1 $19.6400 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 195mOhm @ 10A, 20V | 2.9V @ 1.9mA | 43 nC @ 20 V | +20V, -5V | 885 pF @ 800 V | - | 138W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | 2,795 Cart + RFQ |