Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 3
ProductPricingDatasheetFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / CaseStock & Quantity
IV1Q12050T3
Inventchip Technology
1
$39.2800
Datasheet
N-ChannelSiCFET (Silicon Carbide)1200 V58A (Tc)20V65mOhm @ 20A, 20V3.2V @ 6mA120 nC @ 20 V+20V, -5V2770 pF @ 800 V-327W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
5,050
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IV1Q12050T4
Inventchip Technology
1
$40.3400
Datasheet
N-ChannelSiCFET (Silicon Carbide)1200 V58A (Tc)20V65mOhm @ 20A, 20V3.2V @ 6mA120 nC @ 20 V+20V, -5V2750 pF @ 800 V-344W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
2,340
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IV1Q12160T4
Inventchip Technology
1
$19.6400
Datasheet
N-ChannelSiCFET (Silicon Carbide)1200 V20A (Tc)20V195mOhm @ 10A, 20V2.9V @ 1.9mA43 nC @ 20 V+20V, -5V885 pF @ 800 V-138W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
2,795
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RFQ