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IV1Q12050T4
SIC MOSFET, 1200V 50MOHM, TO-247
Mfr. Part Number
IV1Q12050T4
Manufacturer
Inventchip Technology
Datasheet
Datasheet
Description
SIC MOSFET, 1200V 50MOHM, TO-247
RoHS Status
Lead Free / RoHS Complaint
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IV1Q12050T4
Inventchip Technology
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IV1Q12050T4
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
65mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3.2V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2750 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
344W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Brand Introduction

Inventchip Technology Co., Ltd. is a high-tech semiconductor company, focusing on the product development of Silicon Carbide (SiC) power devices, gate driver ICs and power management controller ICs. Founded in July 2017, their headquarters is located in Shanghai, China and its SiC fab factory is located at Zhejiang Province.

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