IV1Q12050T4 | Yingxinyuan Int'l(Group) Ltd

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IV1Q12050T4

SIC MOSFET, 1200V 50MOHM, TO-247

Mfr. Part Number

IV1Q12050T4

Manufacturer

Inventchip Technology

Datasheet

Description

SIC MOSFET, 1200V 50MOHM, TO-247

RoHS Status

Lead Free / RoHS Complaint

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IV1Q12050T4

Inventchip Technology

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IV1Q12050T4

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

65mOhm @ 20A, 20V

Vgs(th) (Max) @ Id

3.2V @ 6mA

Gate Charge (Qg) (Max) @ Vgs

120 nC @ 20 V

Vgs (Max)

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds

2750 pF @ 800 V

FET Feature

Power Dissipation (Max)

344W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-4

Package / Case

TO-247-4

Brand Introduction

Inventchip Technology Co., Ltd. is a high-tech semiconductor company, focusing on the product development of Silicon Carbide (SiC) power devices, gate driver ICs and power management controller ICs. Founded in July 2017, their headquarters is located in Shanghai, China and its SiC fab factory is located at Zhejiang Province.