
Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 8,427
Product | Pricing | Datasheet | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() IPD80P03P4L07ATMA2 Infineon Technologies | 1 $2.0800 | Datasheet | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | - | 6.8mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1,348 Cart + RFQ |
![]() SPD04N80C3ATMA1 Infineon Technologies | 1 $2.1400 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31 nC @ 10 V | ±20V | 570 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7,183 Cart + RFQ |
![]() BSC070N10NS5ATMA1 Infineon Technologies | 1 $14.4000 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 7mOhm @ 40A, 10V | 3.8V @ 50µA | 38 nC @ 10 V | ±20V | 2700 pF @ 50 V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN | 100,000 Cart + RFQ |
![]() BSC011N03LSIATMA1 Infineon Technologies | 1 $2.2100 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 30 V | 37A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2V @ 250µA | 68 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN | 5,479 Cart + RFQ |
![]() IPD042P03L3GATMA1 Infineon Technologies | 1 $2.3000 | Datasheet | P-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 4.2mOhm @ 70A, 10V | 2V @ 270µA | 175 nC @ 10 V | ±20V | 12400 pF @ 15 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1,823 Cart + RFQ |
![]() BSC123N10LSGATMA1 Infineon Technologies | 1 $2.3100 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.6A (Ta), 71A (Tc) | 4.5V, 10V | 12.3mOhm @ 50A, 10V | 2.4V @ 72µA | 68 nC @ 10 V | ±20V | 4900 pF @ 50 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN | 4,299 Cart + RFQ |
![]() BSC900N20NS3GATMA1 Infineon Technologies | 1 $80.5965 100 $64.4772 500 $53.7310 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 200 V | 15.2A (Tc) | 10V | 90mOhm @ 7.6A, 10V | 4V @ 30µA | 11.6 nC @ 10 V | ±20V | 920 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN | 110 Cart + RFQ |
![]() BSZ900N20NS3GATMA1 Infineon Technologies | 1 $2.3500 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 200 V | 15.2A (Tc) | 10V | 90mOhm @ 7.6A, 10V | 4V @ 30µA | 11.6 nC @ 10 V | ±20V | 920 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN | 3,257 Cart + RFQ |
![]() BSC009NE2LSATMA1 Infineon Technologies | 1 $2.3600 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 25 V | 41A (Ta), 100A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.2V @ 250µA | 126 nC @ 10 V | ±20V | 5800 pF @ 12 V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN | 1,403 Cart + RFQ |
![]() BSC057N08NS3GATMA1 Infineon Technologies | 1 $2.3800 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 80 V | 16A (Ta), 100A (Tc) | 6V, 10V | 5.7mOhm @ 50A, 10V | 3.5V @ 73µA | 56 nC @ 10 V | ±20V | 3900 pF @ 40 V | - | 2.5W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN | 9,386 Cart + RFQ |
![]() BSZ018NE2LSIATMA1 Infineon Technologies | 1 $2.3800 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 25 V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 1.8mOhm @ 20A, 10V | 2V @ 250µA | 36 nC @ 10 V | ±20V | 2500 pF @ 12 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN | 8,902 Cart + RFQ |
![]() IRFZ44ZSTRRPBF Infineon Technologies | 1 $1.9800 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 6,352 Cart + RFQ |
![]() BSC040N08NS5ATMA1 Infineon Technologies | 1 $2.4200 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 4mOhm @ 50A, 10V | 3.8V @ 67µA | 54 nC @ 10 V | ±20V | 3900 pF @ 40 V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN | 3,919 Cart + RFQ |
![]() BSC009NE2LS5ATMA1 Infineon Technologies | 1 $2.5000 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 25 V | 41A (Ta), 100A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2V @ 250µA | 57 nC @ 10 V | ±16V | 3900 pF @ 12 V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN | 1,063 Cart + RFQ |
![]() BSC0500NSIATMA1 Infineon Technologies | 1 $2.5300 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta), 100A (Tc) | 4.5V, 10V | 1.3mOhm @ 30A, 10V | 2V @ 250µA | 52 nC @ 10 V | ±20V | 3300 pF @ 15 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN | 3,788 Cart + RFQ |
![]() BSZ16DN25NS3GATMA1 Infineon Technologies | 1 $11.7390 100 $9.3912 500 $7.8260 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 250 V | 10.9A (Tc) | 10V | 165mOhm @ 5.5A, 10V | 4V @ 32µA | 11.4 nC @ 10 V | ±20V | 920 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN | 762 Cart + RFQ |
![]() SPD06N80C3ATMA1 Infineon Technologies | 1 $2.5600 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Ta) | 10V | 900mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41 nC @ 10 V | ±20V | 785 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8,655 Cart + RFQ |
![]() BSC500N20NS3GATMA1 Infineon Technologies | 1 $2.5600 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 50mOhm @ 22A, 10V | 4V @ 60µA | 15 nC @ 10 V | ±20V | 1580 pF @ 100 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN | 8,750 Cart + RFQ |
![]() IPB029N06N3GATMA1 Infineon Technologies | 1 $2.5800 | Datasheet | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.9mOhm @ 100A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 6,996 Cart + RFQ |
![]() SPD15P10PLGBTMA1 Infineon Technologies | 1 $2.5800 | Datasheet | P-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 200mOhm @ 11.3A, 10V | 2V @ 1.54mA | 62 nC @ 10 V | ±20V | 1490 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7,972 Cart + RFQ |