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IPB029N06N3GATMA1
MOSFET N-CH 60V 120A D2PAK
Mfr. Part Number
IPB029N06N3GATMA1
Manufacturer
Infineon Technologies
Datasheet
Description
MOSFET N-CH 60V 120A D2PAK
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
In Stock: 6,996
Unit Price
$2.5800
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Reference Price
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1$ 2.5800
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Infineon Technologies
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13000 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
188W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Brand Introduction

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

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