Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 793
| Product | Pricing | Datasheet | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FR6A02 GeneSiC Semiconductor | 1 $7.8400 | Datasheet | Standard | 50 V | 6A | 1.4 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C | 8,480 Cart + RFQ |
1N3889 GeneSiC Semiconductor | 1 $9.3000 | Datasheet | Standard | 50 V | 12A | 1.4 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C | 4,709 Cart + RFQ |
S40B GeneSiC Semiconductor | 1 $10.3200 | Datasheet | Standard | 100 V | 40A | 1.1 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 190°C | 9,341 Cart + RFQ |
1N1188R GeneSiC Semiconductor | 1 $11.1300 | Datasheet | Standard, Reverse Polarity | 400 V | 35A | 1.2 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C | 5,825 Cart + RFQ |
GC20MPS12-247 GeneSiC Semiconductor | 1 $11.6200 | Datasheet | Silicon Carbide Schottky | 1200 V | 90A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 1298pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 9,030 Cart + RFQ |
FR30J02 GeneSiC Semiconductor | 1 $14.7400 | Datasheet | Standard | 600 V | 30A | 1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C | 7,848 Cart + RFQ |
GB01SLT06-214 GeneSiC Semiconductor | 1 $1.6300 | Datasheet | Silicon Carbide Schottky | 650 V | 1A | 2 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 6.5 V | 76pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 175°C | 6,245 Cart + RFQ |
GB01SLT12-214 GeneSiC Semiconductor | 1 $2.5700 | Datasheet | Silicon Carbide Schottky | 1200 V | 2.5A | 1.8 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 69pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 175°C | 6,999 Cart + RFQ |
GD10MPS12A GeneSiC Semiconductor | 1 $4.1200 | Datasheet | Silicon Carbide Schottky | 1200 V | 25A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 367pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C | 1,987 Cart + RFQ |
GD02MPS12E GeneSiC Semiconductor | 1 $1.5400 | Datasheet | Silicon Carbide Schottky | 1200 V | 8A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 73pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C | 1,685 Cart + RFQ |
GD10MPS12E GeneSiC Semiconductor | 1 $3.8000 | Datasheet | Silicon Carbide Schottky | 1200 V | 29A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 367pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C | 8,989 Cart + RFQ |
GC20MPS12-220 GeneSiC Semiconductor | 1 $9.8200 | Datasheet | Silicon Carbide Schottky | 1200 V | 94A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 1298pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C | 3,203 Cart + RFQ |
GD50MPS12H GeneSiC Semiconductor | 1 $16.7100 | Datasheet | Silicon Carbide Schottky | 1200 V | 92A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 1200 V | 1.835nF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 8,764 Cart + RFQ |
GC50MPS12-247 GeneSiC Semiconductor | 1 $23.1400 | Datasheet | Silicon Carbide Schottky | 1200 V | 212A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 3263pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 8,217 Cart + RFQ |
S300Y GeneSiC Semiconductor | 1 $65.5700 | Datasheet | Standard | 1600 V | 300A | 1.2 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-9 | -60°C ~ 180°C | 4,332 Cart + RFQ |
1N3210 GeneSiC Semiconductor | 1 $9.6500 | Datasheet | Standard | 200 V | 15A | 1.5 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 175°C | 1,447 Cart + RFQ |
1N1184 GeneSiC Semiconductor | 1 $10.1200 | Datasheet | Standard | 100 V | 35A | 1.2 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C | 6,431 Cart + RFQ |
S85VR GeneSiC Semiconductor | 1 $15.2800 | Datasheet | Standard, Reverse Polarity | 1400 V | 85A | 1.1 V @ 85 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C | 3,785 Cart + RFQ |
1N6098 GeneSiC Semiconductor | 1 $24.1300 | Datasheet | Schottky | 40 V | 50A | 700 mV @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 30 V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C | 1,106 Cart + RFQ |
MBRH20045R GeneSiC Semiconductor | 1 $75.0900 | Datasheet | Schottky, Reverse Polarity | 45 V | 200A | 700 mV @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | - | Chassis Mount | D-67 | D-67 | -55°C ~ 150°C | 5,042 Cart + RFQ |