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GD50MPS12H
1200V 50A TO-247-2 SIC SCHOTTKY
Mfr. Part Number
GD50MPS12H
Manufacturer
GeneSiC Semiconductor
Datasheet
Description
1200V 50A TO-247-2 SIC SCHOTTKY
RoHS Status
Lead Free / RoHS Complaint
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GD50MPS12H
GeneSiC Semiconductor
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GD50MPS12H
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
92A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 50 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
15 µA @ 1200 V
Capacitance @ Vr, F
1.835nF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
TO-247-2
Operating Temperature - Junction
-55°C ~ 175°C
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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