Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 48
Product | Pricing | Datasheet | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
P3D06002E2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 9A | - | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | - | - | TO-252-2 | TO-252-2 | -55°C ~ 175°C (TJ) | 3,896 Cart + RFQ | |
P3D06004G2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 14A | - | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | - | - | TO-263-2 | TO-263-2 | -55°C ~ 175°C (TJ) | 6,455 Cart + RFQ | |
P3D06004E2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 12A | - | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | - | - | TO-252-2 | TO-252-2 | -55°C ~ 175°C (TJ) | 1,173 Cart + RFQ | |
P3D06002T2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 6A | - | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | - | - | TO-220-2 | TO-220-2 | -55°C ~ 175°C (TJ) | 3,503 Cart + RFQ | |
P3D06002G2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 7A | - | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | - | - | TO-263-2 | TO-263-2 | -55°C ~ 175°C (TJ) | 3,995 Cart + RFQ | |
P3D06004T2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 15A | - | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | - | - | TO-220-2 | TO-220-2 | -55°C ~ 175°C (TJ) | 8,468 Cart + RFQ | |
P3D06006E2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 18A | - | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | - | - | TO-252-2 | TO-252-2 | -55°C ~ 175°C (TJ) | 1,149 Cart + RFQ | |
P3D06006T2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 23A | - | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | - | - | TO-220-2 | TO-220-2 | -55°C ~ 175°C (TJ) | 3,547 Cart + RFQ | |
P3D06006G2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 21A | - | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | - | - | TO-263-2 | TO-263-2 | -55°C ~ 175°C (TJ) | 4,290 Cart + RFQ | |
P3D06006I2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 18A | - | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | - | - | TO-220I-2 | TO-220I-2 | -55°C ~ 175°C (TJ) | 9,811 Cart + RFQ | |
P3D06006F2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 15A | - | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | - | - | TO-220F-2 | TO-220F-2 | -55°C ~ 175°C (TJ) | 8,183 Cart + RFQ | |
P6D12002E2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 1200 V | 8A | - | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | - | - | TO-252-2 | TO-252-2 | -55°C ~ 175°C (TJ) | 5,337 Cart + RFQ | |
P3D06008F2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 18A | - | No Recovery Time > 500mA (Io) | 0 ns | 36 µA @ 650 V | - | - | TO-220F-2 | TO-220F-2 | -55°C ~ 175°C (TJ) | 2,832 Cart + RFQ | |
P3D06008G2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 26A | - | No Recovery Time > 500mA (Io) | 0 ns | 36 µA @ 650 V | - | - | TO-263-2 | TO-263-2 | -55°C ~ 175°C (TJ) | 3,577 Cart + RFQ | |
P3D06008E2 PN Junction Semiconductor | 1 $3.3300 | Datasheet | Silicon Carbide Schottky | 650 V | 22A | - | No Recovery Time > 500mA (Io) | 0 ns | 36 µA @ 650 V | - | - | TO-252-2 | TO-252-2 | -55°C ~ 175°C (TJ) | 8,392 Cart + RFQ |
P3D06008T2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 26A | - | No Recovery Time > 500mA (Io) | 0 ns | 36 µA @ 650 V | - | - | TO-220-2 | TO-220-2 | -55°C ~ 175°C (TJ) | 3,228 Cart + RFQ | |
P3D06008I2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 21A | - | No Recovery Time > 500mA (Io) | 0 ns | 36 µA @ 650 V | - | - | TO-220I-2 | TO-220I-2 | -55°C ~ 175°C (TJ) | 7,963 Cart + RFQ | |
P3D06010G2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 30A | - | No Recovery Time > 500mA (Io) | 0 ns | 44 µA @ 650 V | - | - | TO-263-2 | TO-263-2 | -55°C ~ 175°C (TJ) | 8,940 Cart + RFQ | |
P3D06010F2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 21A | - | No Recovery Time > 500mA (Io) | 0 ns | 44 µA @ 650 V | - | - | TO-220F-2 | TO-220F-2 | -55°C ~ 175°C (TJ) | 2,459 Cart + RFQ | |
P3D06010I2 PN Junction Semiconductor | Datasheet | Silicon Carbide Schottky | 650 V | 26A | - | No Recovery Time > 500mA (Io) | 0 ns | 44 µA @ 650 V | - | - | TO-220I-2 | TO-220I-2 | -55°C ~ 175°C (TJ) | 2,475 Cart + RFQ |