Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 48
ProductPricingDatasheetDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - JunctionStock & Quantity
P3D06002E2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V9A-No Recovery Time > 500mA (Io)0 ns10 µA @ 650 V--TO-252-2TO-252-2-55°C ~ 175°C (TJ)
3,896
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P3D06004G2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V14A-No Recovery Time > 500mA (Io)0 ns20 µA @ 650 V--TO-263-2TO-263-2-55°C ~ 175°C (TJ)
6,455
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P3D06004E2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V12A-No Recovery Time > 500mA (Io)0 ns20 µA @ 650 V--TO-252-2TO-252-2-55°C ~ 175°C (TJ)
1,173
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P3D06002T2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V6A-No Recovery Time > 500mA (Io)0 ns10 µA @ 650 V--TO-220-2TO-220-2-55°C ~ 175°C (TJ)
3,503
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P3D06002G2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V7A-No Recovery Time > 500mA (Io)0 ns10 µA @ 650 V--TO-263-2TO-263-2-55°C ~ 175°C (TJ)
3,995
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P3D06004T2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V15A-No Recovery Time > 500mA (Io)0 ns20 µA @ 650 V--TO-220-2TO-220-2-55°C ~ 175°C (TJ)
8,468
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P3D06006E2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V18A-No Recovery Time > 500mA (Io)0 ns30 µA @ 650 V--TO-252-2TO-252-2-55°C ~ 175°C (TJ)
1,149
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P3D06006T2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V23A-No Recovery Time > 500mA (Io)0 ns30 µA @ 650 V--TO-220-2TO-220-2-55°C ~ 175°C (TJ)
3,547
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P3D06006G2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V21A-No Recovery Time > 500mA (Io)0 ns30 µA @ 650 V--TO-263-2TO-263-2-55°C ~ 175°C (TJ)
4,290
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P3D06006I2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V18A-No Recovery Time > 500mA (Io)0 ns30 µA @ 650 V--TO-220I-2TO-220I-2-55°C ~ 175°C (TJ)
9,811
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P3D06006F2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V15A-No Recovery Time > 500mA (Io)0 ns30 µA @ 650 V--TO-220F-2TO-220F-2-55°C ~ 175°C (TJ)
8,183
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P6D12002E2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky1200 V8A-No Recovery Time > 500mA (Io)0 ns50 µA @ 650 V--TO-252-2TO-252-2-55°C ~ 175°C (TJ)
5,337
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P3D06008F2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V18A-No Recovery Time > 500mA (Io)0 ns36 µA @ 650 V--TO-220F-2TO-220F-2-55°C ~ 175°C (TJ)
2,832
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P3D06008G2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V26A-No Recovery Time > 500mA (Io)0 ns36 µA @ 650 V--TO-263-2TO-263-2-55°C ~ 175°C (TJ)
3,577
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P3D06008E2
PN Junction Semiconductor
1
$3.3300
Datasheet
Silicon Carbide Schottky650 V22A-No Recovery Time > 500mA (Io)0 ns36 µA @ 650 V--TO-252-2TO-252-2-55°C ~ 175°C (TJ)
8,392
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RFQ
P3D06008T2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V26A-No Recovery Time > 500mA (Io)0 ns36 µA @ 650 V--TO-220-2TO-220-2-55°C ~ 175°C (TJ)
3,228
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RFQ
P3D06008I2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V21A-No Recovery Time > 500mA (Io)0 ns36 µA @ 650 V--TO-220I-2TO-220I-2-55°C ~ 175°C (TJ)
7,963
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P3D06010G2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V30A-No Recovery Time > 500mA (Io)0 ns44 µA @ 650 V--TO-263-2TO-263-2-55°C ~ 175°C (TJ)
8,940
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RFQ
P3D06010F2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V21A-No Recovery Time > 500mA (Io)0 ns44 µA @ 650 V--TO-220F-2TO-220F-2-55°C ~ 175°C (TJ)
2,459
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RFQ
P3D06010I2
PN Junction Semiconductor
Datasheet
Silicon Carbide Schottky650 V26A-No Recovery Time > 500mA (Io)0 ns44 µA @ 650 V--TO-220I-2TO-220I-2-55°C ~ 175°C (TJ)
2,475
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RFQ