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P3D06004E2
DIODE SCHOTTKY 600V 4A TO252-2
Mfr. Part Number
P3D06004E2
Manufacturer
PN Junction Semiconductor
Datasheet
Description
DIODE SCHOTTKY 600V 4A TO252-2
RoHS Status
Lead Free / RoHS Complaint
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P3D06004E2
PN Junction Semiconductor
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P3D06004E2
PN Junction Semiconductor
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Specifications
Product Description
Purchase & Inquiry
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
-
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
20 µA @ 650 V
Capacitance @ Vr, F
-
Mounting Type
-
Package / Case
TO-252-2
Supplier Device Package
TO-252-2
Operating Temperature - Junction
-55°C ~ 175°C (TJ)
Brand Introduction

PN Junction Semiconductor is a semiconductor power device enterprise (Fabless model), and established a strategic partnership with worldwide leading foundry X-FAB a fully automotive-qualified fab for more than 30 years that supports PNJ's silicon carbide power device in high quality. PNJ focusing on silicon carbide and gallium nitride power device design and product sales. Products include SiC SBD, SiC MOS, and GaN HEMT, and more. Their products are designed for servers and data center power supplies, new energy vehicles, smart grids, 5G Internet of Things, as well as others.

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