Discrete Semiconductor Products
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
Product List
Total Components: 94
ProductPricingDatasheetPackage / CaseSupplier Device PackageIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVoltage - Anode - Cathode (Vak)(Max)Vce(on) (Max) @ Vge, IcRegulator Current (Max)Current - Collector Cutoff (Max)Voltage - Limiting (Max)Input Capacitance (Cies) @ VcePower - MaxInputApplicationsNTC ThermistorOperating TemperatureOperating TemperatureMounting TypeMounting TypePackage / CasePackage / CaseSupplier Device PackageSupplier Device PackageDiode TypeIGBT TypeTechnologyVoltage - Collector Emitter Breakdown (Max)Voltage - Peak Reverse (Max)Current - Collector (Ic) (Max)Current - Average Rectified (Io)Current - Collector Pulsed (Icm)Voltage - Forward (Vf) (Max) @ IfVce(on) (Max) @ Vge, IcCurrent - Reverse Leakage @ VrPower - MaxOperating TemperatureSwitching EnergyMounting TypeInput TypePackage / CaseGate ChargeSupplier Device PackageTd (on/off) @ 25°CDiode TypeTest ConditionVoltage - Peak Reverse (Max)Reverse Recovery Time (trr)Current - MaxOperating TemperatureCapacitance @ Vr, FMounting TypeResistance @ If, FPackage / CasePower Dissipation (Max)Supplier Device PackageOperating TemperatureFET TypePackage / CaseVoltage - Breakdown (V(BR)GSS)Supplier Device PackageDrain to Source Voltage (Vdss)Diode ConfigurationCurrent - Drain (Idss) @ Vds (Vgs=0)Diode TypeCurrent Drain (Id) - MaxVoltage - DC Reverse (Vr) (Max)Voltage - Cutoff (VGS off) @ IdCurrent - Average Rectified (Io) (per Diode)Input Capacitance (Ciss) (Max) @ VdsVoltage - Forward (Vf) (Max) @ IfResistance - RDS(On)SpeedPower - MaxReverse Recovery Time (trr)Operating TemperatureCurrent - Reverse Leakage @ VrMounting TypeOperating Temperature - JunctionPackage / CaseMounting TypeSupplier Device PackagePackage / CaseVoltageSupplier Device PackagePower Dissipation (Max)Diode TypeVoltage - OutputVoltage - DC Reverse (Vr) (Max)Voltage - Offset (Vt)Current - Average Rectified (Io)Current - Gate to Anode Leakage (Igao)Voltage - Forward (Vf) (Max) @ IfCurrent - Valley (Iv)SpeedCurrent - PeakReverse Recovery Time (trr)Package / CaseCurrent - Reverse Leakage @ VrTransistor TypeCapacitance @ Vr, FApplicationsMounting TypeVoltage - RatedPackage / CaseCurrent Rating (Amps)Supplier Device PackageMounting TypeOperating Temperature - JunctionPackage / CaseCapacitance @ Vr, FSupplier Device PackageCapacitance RatioCapacitance Ratio ConditionVoltage - Peak Reverse (Max)Diode TypeQ @ Vr, FOperating TemperatureMounting TypePackage / CaseSupplier Device PackageConfigurationVoltage - Zener (Nom) (Vz)TolerancePower - MaxImpedance (Max) (Zzt)Current - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfOperating TemperatureMounting TypePackage / CaseSupplier Device PackageVoltage - Zener (Nom) (Vz)TolerancePower - MaxImpedance (Max) (Zzt)Current - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTypeConfigurationCurrentVoltageVoltage - IsolationMounting TypePackage / CaseVoltage - BreakoverCurrent - BreakoverCurrent - Hold (Ih) (Max)Current - Peak OutputOperating TemperaturePackage / CaseSupplier Device PackageStructureNumber of SCRs, DiodesVoltage - Off StateCurrent - On State (It (AV)) (Max)Current - On State (It (RMS)) (Max)Voltage - Gate Trigger (Vgt) (Max)Current - Gate Trigger (Igt) (Max)Current - Non Rep. Surge 50, 60Hz (Itsm)Current - Hold (Ih) (Max)Operating TemperatureMounting TypePackage / CaseVoltage - Off StateVoltage - Gate Trigger (Vgt) (Max)Current - Gate Trigger (Igt) (Max)Voltage - On State (Vtm) (Max)Current - On State (It (AV)) (Max)Current - On State (It (RMS)) (Max)Current - Hold (Ih) (Max)Current - Off State (Max)Current - Non Rep. Surge 50, 60Hz (Itsm)SCR TypeOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTriac TypeVoltage - Off StateCurrent - On State (It (RMS)) (Max)Voltage - Gate Trigger (Vgt) (Max)Current - Non Rep. Surge 50, 60Hz (Itsm)Current - Gate Trigger (Igt) (Max)Current - Hold (Ih) (Max)ConfigurationOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePower - MaxFrequency - TransitionOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)DC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)Frequency - TransitionPower - MaxMounting TypePackage / CaseSupplier Device PackageTransistor TypeVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionNoise Figure (dB Typ @ f)GainPower - MaxDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector (Ic) (Max)Operating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePower - MaxFrequency - TransitionOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)DC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)Frequency - TransitionPower - MaxMounting TypePackage / CaseSupplier Device PackageFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeFrequencyGainVoltage - TestCurrent Rating (Amps)Noise FigureCurrent - TestPower - OutputVoltage - RatedPackage / CaseSupplier Device PackageFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / CaseIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVce(on) (Max) @ Vge, IcCurrent - Collector Cutoff (Max)Input Capacitance (Cies) @ VceInputNTC ThermistorOperating TemperatureMounting TypeStock & Quantity
UJ3D1250K2
UnitedSiC
1
$23.1900
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1200 V-50A-1.7 V @ 50 A-No Recovery Time > 500mA (Io)-0 ns-400 µA @ 1200 V-2.34nF @ 1V, 1MHz-Through Hole-TO-247-2-TO-247-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
8,981
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UJ3D1202TS
UnitedSiC
1
$2.5600
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1200 V-2A-1.6 V @ 5 A-No Recovery Time > 500mA (Io)-0 ns-22 µA @ 1200 V-109pF @ 1V, 1MHz-Through Hole-TO-220-2-TO-220-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
9,800
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UJ3D06560KSD
UnitedSiC
1
$15.1000
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-30A-1.7 V @ 30 A-No Recovery Time > 500mA (Io)-0 ns-740 µA @ 650 V-1980pF @ 1V, 1MHz-Through Hole-TO-247-3-TO-247-3--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
5,286
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UJ3D06504TS
UnitedSiC
1
$2.2100
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-4A-1.7 V @ 4 A-No Recovery Time > 500mA (Io)-0 ns-25 µA @ 650 V-118pF @ 1V, 1MHz-Through Hole-TO-220-2-TO-220-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
2,657
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UJ3D06508TS
UnitedSiC
1
$3.1600
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-8A-1.7 V @ 8 A-No Recovery Time > 500mA (Io)-0 ns-50 µA @ 650 V-250pF @ 1V, 1MHz-Through Hole-TO-220-2-TO-220-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
3,471
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RFQ
UJ3D06510TS
UnitedSiC
1
$3.4000
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-10A-1.7 V @ 10 A-No Recovery Time > 500mA (Io)-0 ns-60 µA @ 650 V-327pF @ 1V, 1MHz-Through Hole-TO-220-2-TO-220-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
3,044
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UJ3D1205TS
UnitedSiC
1
$3.9100
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1200 V-5A-1.6 V @ 5 A-No Recovery Time > 500mA (Io)-0 ns-55 µA @ 1200 V-250pF @ 1V, 1MHz-Through Hole-TO-220-2-TO-220-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
1,142
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RFQ
UJ3D06512TS
UnitedSiC
1
$4.6600
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-12A-1.7 V @ 12 A-No Recovery Time > 500mA (Io)-0 ns-80 µA @ 650 V-392pF @ 1V, 1MHz-Through Hole-TO-220-2-TO-220-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
4,627
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RFQ
UJ3D06520TS
UnitedSiC
1
$5.8400
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-20A-1.7 V @ 20 A-No Recovery Time > 500mA (Io)-0 ns-120 µA @ 650 V-654pF @ 1V, 1MHz-Through Hole-TO-220-2-TO-220-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
4,145
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RFQ
UJ3D1210TS
UnitedSiC
1
$6.3200
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1200 V-10A-1.6 V @ 10 A-No Recovery Time > 500mA (Io)-0 ns-110 µA @ 1200 V-510pF @ 1V, 1MHz-Through Hole-TO-220-2-TO-220-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
4,804
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RFQ
UJ3D06516TS
UnitedSiC
1
$6.6700
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-16A-1.7 V @ 16 A-No Recovery Time > 500mA (Io)-0 ns-100 µA @ 650 V-500pF @ 1V, 1MHz-Through Hole-TO-220-2-TO-220-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
7,344
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RFQ
UJ3D1210K2
UnitedSiC
1
$6.6900
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1200 V-10A-1.6 V @ 10 A-No Recovery Time > 500mA (Io)-0 ns-110 µA @ 1200 V-510pF @ 1V, 1MHz-Through Hole-TO-247-2-TO-247-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
6,104
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RFQ
UJ3D06530TS
UnitedSiC
1
$7.6700
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-30A-1.7 V @ 30 A-No Recovery Time > 500mA (Io)-0 ns-370 µA @ 650 V-990pF @ 1V, 1MHz-Through Hole-TO-220-2-TO-220-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
4,500
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RFQ
UJ3D1220K2
UnitedSiC
1
$10.0100
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1200 V-20A-1.7 V @ 20 A-No Recovery Time > 500mA (Io)-0 ns-190 µA @ 1200 V-810pF @ 1V, 1MHz-Through Hole-TO-247-2-TO-247-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
2,121
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RFQ
UJ3D1250K
UnitedSiC
1
$23.1900
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1200 V-50A-1.7 V @ 50 A-No Recovery Time > 500mA (Io)-0 ns-400 µA @ 1200 V-2340pF @ 1V, 1MHz-Through Hole-TO-247-3-TO-247-3--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
5,134
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RFQ
UJ3D1220KSD
UnitedSiC
1
$11.2400
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1200 V-10A-1.6 V @ 10 A-No Recovery Time > 500mA (Io)-0 ns-220 µA @ 1200 V-1020pF @ 1V, 1MHz-Through Hole-TO-247-3-TO-247-3--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
9,378
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RFQ
UJ3D1725K2
UnitedSiC
1
$16.8600
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1700 V-25A-1.7 V @ 25 A-No Recovery Time > 500mA (Io)-0 ns-360 µA @ 1700 V-1500pF @ 1V, 1MHz-Through Hole-TO-247-2-TO-247-2--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
1,669
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RFQ
UJ3D1210KS
UnitedSiC
1
$6.3700
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1200 V-10A-1.6 V @ 10 A-No Recovery Time > 500mA (Io)-0 ns-110 µA @ 1200 V-510pF @ 1V, 1MHz-Through Hole-TO-247-3-TO-247-3--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
5,970
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RFQ
UJ3D06520KSD
UnitedSiC
1
$6.4900
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-10A-1.7 V @ 10 A-No Recovery Time > 500mA (Io)-0 ns-120 µA @ 650 V-654pF @ 1V, 1MHz-Through Hole-TO-247-3-TO-247-3--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
7,843
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RFQ
UJ3D1210KSD
UnitedSiC
1
$6.9500
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1200 V-5A-1.6 V @ 5 A-No Recovery Time > 500mA (Io)-0 ns-110 µA @ 1200 V-500pF @ 1V, 1MHz-Through Hole-TO-247-3-TO-247-3--55°C ~ 175°C-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
5,323
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RFQ