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UJ3D06512TS
650V 12A SIC SCHOTTKY DIODE G3,
Mfr. Part Number
UJ3D06512TS
Manufacturer
UnitedSiC
Datasheet
Description
650V 12A SIC SCHOTTKY DIODE G3,
RoHS Status
Lead Free / RoHS Complaint
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UJ3D06512TS
UnitedSiC
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UJ3D06512TS
UnitedSiC
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Specifications
Product Description
Purchase & Inquiry
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 12 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
80 µA @ 650 V
Capacitance @ Vr, F
392pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2
Operating Temperature - Junction
-55°C ~ 175°C
Brand Introduction

UnitedSiC is now Qorvo.

UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters and traction drives, as well as telecom/server power supplies variable speed motor drives and solar PV inverters.

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