Discrete Semiconductor Products
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
Product List
Total Components: 87
ProductPricingDatasheetPackage / CaseSupplier Device PackageIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVoltage - Anode - Cathode (Vak)(Max)Vce(on) (Max) @ Vge, IcRegulator Current (Max)Current - Collector Cutoff (Max)Voltage - Limiting (Max)Input Capacitance (Cies) @ VcePower - MaxInputApplicationsNTC ThermistorOperating TemperatureOperating TemperatureMounting TypeMounting TypePackage / CasePackage / CaseSupplier Device PackageSupplier Device PackageDiode TypeIGBT TypeTechnologyVoltage - Collector Emitter Breakdown (Max)Voltage - Peak Reverse (Max)Current - Collector (Ic) (Max)Current - Average Rectified (Io)Current - Collector Pulsed (Icm)Voltage - Forward (Vf) (Max) @ IfVce(on) (Max) @ Vge, IcCurrent - Reverse Leakage @ VrPower - MaxOperating TemperatureSwitching EnergyMounting TypeInput TypePackage / CaseGate ChargeSupplier Device PackageTd (on/off) @ 25°CDiode TypeTest ConditionVoltage - Peak Reverse (Max)Reverse Recovery Time (trr)Current - MaxOperating TemperatureCapacitance @ Vr, FMounting TypeResistance @ If, FPackage / CasePower Dissipation (Max)Supplier Device PackageOperating TemperatureFET TypePackage / CaseVoltage - Breakdown (V(BR)GSS)Supplier Device PackageDrain to Source Voltage (Vdss)Diode ConfigurationCurrent - Drain (Idss) @ Vds (Vgs=0)Diode TypeCurrent Drain (Id) - MaxVoltage - DC Reverse (Vr) (Max)Voltage - Cutoff (VGS off) @ IdCurrent - Average Rectified (Io) (per Diode)Input Capacitance (Ciss) (Max) @ VdsVoltage - Forward (Vf) (Max) @ IfResistance - RDS(On)SpeedPower - MaxReverse Recovery Time (trr)Operating TemperatureCurrent - Reverse Leakage @ VrMounting TypeOperating Temperature - JunctionPackage / CaseMounting TypeSupplier Device PackagePackage / CaseVoltageSupplier Device PackagePower Dissipation (Max)Diode TypeVoltage - OutputVoltage - DC Reverse (Vr) (Max)Voltage - Offset (Vt)Current - Average Rectified (Io)Current - Gate to Anode Leakage (Igao)Voltage - Forward (Vf) (Max) @ IfCurrent - Valley (Iv)SpeedCurrent - PeakReverse Recovery Time (trr)Package / CaseCurrent - Reverse Leakage @ VrTransistor TypeCapacitance @ Vr, FApplicationsMounting TypeVoltage - RatedPackage / CaseCurrent Rating (Amps)Supplier Device PackageMounting TypeOperating Temperature - JunctionPackage / CaseCapacitance @ Vr, FSupplier Device PackageCapacitance RatioCapacitance Ratio ConditionVoltage - Peak Reverse (Max)Diode TypeQ @ Vr, FOperating TemperatureMounting TypePackage / CaseSupplier Device PackageConfigurationVoltage - Zener (Nom) (Vz)TolerancePower - MaxImpedance (Max) (Zzt)Current - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfOperating TemperatureMounting TypePackage / CaseSupplier Device PackageVoltage - Zener (Nom) (Vz)TolerancePower - MaxImpedance (Max) (Zzt)Current - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTypeConfigurationCurrentVoltageVoltage - IsolationMounting TypePackage / CaseVoltage - BreakoverCurrent - BreakoverCurrent - Hold (Ih) (Max)Current - Peak OutputOperating TemperaturePackage / CaseSupplier Device PackageStructureNumber of SCRs, DiodesVoltage - Off StateCurrent - On State (It (AV)) (Max)Current - On State (It (RMS)) (Max)Voltage - Gate Trigger (Vgt) (Max)Current - Gate Trigger (Igt) (Max)Current - Non Rep. Surge 50, 60Hz (Itsm)Current - Hold (Ih) (Max)Operating TemperatureMounting TypePackage / CaseVoltage - Off StateVoltage - Gate Trigger (Vgt) (Max)Current - Gate Trigger (Igt) (Max)Voltage - On State (Vtm) (Max)Current - On State (It (AV)) (Max)Current - On State (It (RMS)) (Max)Current - Hold (Ih) (Max)Current - Off State (Max)Current - Non Rep. Surge 50, 60Hz (Itsm)SCR TypeOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTriac TypeVoltage - Off StateCurrent - On State (It (RMS)) (Max)Voltage - Gate Trigger (Vgt) (Max)Current - Non Rep. Surge 50, 60Hz (Itsm)Current - Gate Trigger (Igt) (Max)Current - Hold (Ih) (Max)ConfigurationOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePower - MaxFrequency - TransitionOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)DC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)Frequency - TransitionPower - MaxMounting TypePackage / CaseSupplier Device PackageTransistor TypeVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionNoise Figure (dB Typ @ f)GainPower - MaxDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector (Ic) (Max)Operating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePower - MaxFrequency - TransitionOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)DC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)Frequency - TransitionPower - MaxMounting TypePackage / CaseSupplier Device PackageFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeFrequencyGainVoltage - TestCurrent Rating (Amps)Noise FigureCurrent - TestPower - OutputVoltage - RatedPackage / CaseSupplier Device PackageFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / CaseIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVce(on) (Max) @ Vge, IcCurrent - Collector Cutoff (Max)Input Capacitance (Cies) @ VceInputNTC ThermistorOperating TemperatureMounting TypeStock & Quantity
P3D06002E2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-9A---No Recovery Time > 500mA (Io)-0 ns-10 µA @ 650 V-----TO-252-2-TO-252-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
3,896
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P3D06004G2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-14A---No Recovery Time > 500mA (Io)-0 ns-20 µA @ 650 V-----TO-263-2-TO-263-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
6,455
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P3D06004E2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-12A---No Recovery Time > 500mA (Io)-0 ns-20 µA @ 650 V-----TO-252-2-TO-252-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
1,173
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P3D06002T2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-6A---No Recovery Time > 500mA (Io)-0 ns-10 µA @ 650 V-----TO-220-2-TO-220-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
3,503
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P3D06002G2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-7A---No Recovery Time > 500mA (Io)-0 ns-10 µA @ 650 V-----TO-263-2-TO-263-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
3,995
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P3D06004T2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-15A---No Recovery Time > 500mA (Io)-0 ns-20 µA @ 650 V-----TO-220-2-TO-220-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
8,468
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RFQ
P3D06006E2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-18A---No Recovery Time > 500mA (Io)-0 ns-30 µA @ 650 V-----TO-252-2-TO-252-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
1,149
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P3D06006T2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-23A---No Recovery Time > 500mA (Io)-0 ns-30 µA @ 650 V-----TO-220-2-TO-220-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
3,547
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P3D06006G2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-21A---No Recovery Time > 500mA (Io)-0 ns-30 µA @ 650 V-----TO-263-2-TO-263-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
4,290
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RFQ
P3D06006I2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-18A---No Recovery Time > 500mA (Io)-0 ns-30 µA @ 650 V-----TO-220I-2-TO-220I-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
9,811
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P3D06006F2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-15A---No Recovery Time > 500mA (Io)-0 ns-30 µA @ 650 V-----TO-220F-2-TO-220F-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
8,183
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P6D12002E2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-1200 V-8A---No Recovery Time > 500mA (Io)-0 ns-50 µA @ 650 V-----TO-252-2-TO-252-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
5,337
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P3D06008F2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-18A---No Recovery Time > 500mA (Io)-0 ns-36 µA @ 650 V-----TO-220F-2-TO-220F-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
2,832
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P3D06008G2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-26A---No Recovery Time > 500mA (Io)-0 ns-36 µA @ 650 V-----TO-263-2-TO-263-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
3,577
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P3D06008E2
PN Junction Semiconductor
1
$3.3300
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-22A---No Recovery Time > 500mA (Io)-0 ns-36 µA @ 650 V-----TO-252-2-TO-252-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
8,392
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P3D06008T2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-26A---No Recovery Time > 500mA (Io)-0 ns-36 µA @ 650 V-----TO-220-2-TO-220-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
3,228
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P3D06008I2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-21A---No Recovery Time > 500mA (Io)-0 ns-36 µA @ 650 V-----TO-220I-2-TO-220I-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
7,963
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P3D06010G2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-30A---No Recovery Time > 500mA (Io)-0 ns-44 µA @ 650 V-----TO-263-2-TO-263-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
8,940
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P3D06010F2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-21A---No Recovery Time > 500mA (Io)-0 ns-44 µA @ 650 V-----TO-220F-2-TO-220F-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
2,459
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P3D06010I2
PN Junction Semiconductor
Datasheet
---------------------------------------------------------------------------------------Silicon Carbide Schottky-650 V-26A---No Recovery Time > 500mA (Io)-0 ns-44 µA @ 650 V-----TO-220I-2-TO-220I-2--55°C ~ 175°C (TJ)-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
2,475
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RFQ