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UP1966E
IC GATE DRVR HALF-BRIDGE 12WLCSP
Mfr. Part Number
UP1966E
Manufacturer
EPC
Datasheet
Datasheet
Description
IC GATE DRVR HALF-BRIDGE 12WLCSP
RoHS Status
Lead Free / RoHS Complaint
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UP1966E
EPC
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UP1966E
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Specifications
Product Description
Purchase & Inquiry
Driven Configuration
Half-Bridge
Channel Type
Independent
Number of Drivers
2
Gate Type
Enhanced Mode GaN FET
Voltage - Supply
4.5V ~ 5.5V
Logic Voltage - VIL, VIH
0.5V, 2.3V
Current - Peak Output (Source, Sink)
7.1A, 12.5A
Input Type
Non-Inverting
High Side Voltage - Max (Bootstrap)
85 V
Rise / Fall Time (Typ)
8ns, 4ns
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Package / Case
12-UFBGA, WLCSP
Supplier Device Package
12-WLCSP-B (1.6x1.6)
Brand Introduction
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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