EPC2112ENGRT | Yingxinyuan Int'l(Group) Ltd

• • • • • EPC2112ENGRT

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EPC2112ENGRT

200 V GAN IC FET DRIVER

Mfr. Part Number

EPC2112ENGRT

Manufacturer

EPC

Datasheet

Description

200 V GAN IC FET DRIVER

RoHS Status

Lead Free / RoHS Complaint

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EPC2112ENGRT

EPC

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EPC2112ENGRT

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Specifications

Product Description

Purchase & Inquiry

Output Configuration

Low Side

Applications

DC-DC Converters

Interface

On/Off

Load Type

Inductive

Technology

MOSFET (Metal Oxide)

Rds On (Typ)

32mOhm

Current - Output / Channel

10A

Current - Peak Output

40A

Voltage - Supply

4.5V ~ 5.5V

Voltage - Load

160V (Max)

Operating Temperature

-40°C ~ 150°C (TJ)

Features

Fault Protection

Mounting Type

Surface Mount

Package / Case

10-VFBGA

Supplier Device Package

10-BGA (2.9x1.1)

Brand Introduction

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.