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EM6A9160TSC-4G
IC DRAM 128MBIT PAR 66TSOP II
Mfr. Part Number
EM6A9160TSC-4G
Manufacturer
Etron Technology
Datasheet
Description
IC DRAM 128MBIT PAR 66TSOP II
RoHS Status
Lead Free / RoHS Complaint
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Etron Technology
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EM6A9160TSC-4G
Etron Technology
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Specifications
Product Description
Purchase & Inquiry
Memory Type
Volatile
Memory Format
DRAM
Technology
SDRAM - DDR
Memory Size
128Mb (8M x 16)
Memory Interface
Parallel
Clock Frequency
250 MHz
Write Cycle Time - Word, Page
12ns
Access Time
700 ps
Voltage - Supply
2.3V ~ 2.7V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Surface Mount
Package / Case
66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package
66-TSOP II
Brand Introduction
Etron Technology is a Taiwan-based fabless DRAM supplier established in 1991 and focused on providing customer solutions for legacy DRAM products and value added DRAMs optimized for form factor driven applications, especially in mobile and wearable markets. Etron’s products are differentiated by packaging, AOQ, parametric specifications and unique functionality. Etron is the leading supplier of fully tested bare die DRAM “Known Good Die” and has recently introduced the world’s first DRAM offered in a wafer level chip scale package. With a product line spanning pseudo-static and single Data Rate up to the latest DDR products, Etron is your supplier of choice.
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