71V35761S200BGG | Yingxinyuan Int'l(Group) Ltd

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71V35761S200BGG

IC SRAM 4.5MBIT PARALLEL 119PBGA

Mfr. Part Number

71V35761S200BGG

Manufacturer

Renesas Electronics Corporation

Datasheet

Description

IC SRAM 4.5MBIT PARALLEL 119PBGA

RoHS Status

Lead Free / RoHS Complaint

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71V35761S200BGG

Renesas Electronics Corporation

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71V35761S200BGG

Renesas Electronics Corporation

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Specifications

Product Description

Purchase & Inquiry

Memory Type

Volatile

Memory Format

SRAM

Technology

SRAM - Synchronous, SDR

Memory Size

4.5Mb (128K x 36)

Memory Interface

Parallel

Clock Frequency

200 MHz

Write Cycle Time - Word, Page

Access Time

3.1 ns

Voltage - Supply

3.135V ~ 3.465V

Operating Temperature

0°C ~ 70°C (TA)

Mounting Type

Surface Mount

Package / Case

119-BGA

Supplier Device Package

119-PBGA (14x22)

Brand Introduction

Renesas Electronics Corporation delivers trusted embedded design innovation with complete semiconductor solutions that enable billions of connected, intelligent devices to enhance the way people work and live—securely and safely. A global leader in microcontrollers, analog, power, and SoC products and integrated platforms, Renesas provides the expertise, quality, and comprehensive solutions for a broad range of Automotive, Industrial, Home Electronics, Office Automation and Information Communication Technology applications to help shape a limitless future.