2SK879-GR(TE85L,F) | Yingxinyuan Int'l(Group) Ltd

• • • • 2SK879-GR(TE85L,F)

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2SK879-GR(TE85L,F)

JFET N-CH 0.1W USM

Mfr. Part Number

2SK879-GR(TE85L,F)

Manufacturer

TAEC Product (Toshiba Electronic Devices and Storage Corporation)

Datasheet

Description

JFET N-CH 0.1W USM

RoHS Status

Lead Free / RoHS Complaint

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2SK879-GR(TE85L,F)

TAEC Product (Toshiba Electronic Devices and Storage Corporation)

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In Stock: 6,726

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Reference Price

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1	$ 0.4400

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2SK879-GR(TE85L,F)

TAEC Product (Toshiba Electronic Devices and Storage Corporation)

*Quantity:

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

Drain to Source Voltage (Vdss)

Current - Drain (Idss) @ Vds (Vgs=0)

2.6 mA @ 10 V

Current Drain (Id) - Max

Voltage - Cutoff (VGS off) @ Id

400 mV @ 100 nA

Input Capacitance (Ciss) (Max) @ Vds

8.2pF @ 10V

Resistance - RDS(On)

Power - Max

100 mW

Operating Temperature

125°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

USM

Brand Introduction

Toshiba Electronic Devices and Storage Corporation offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.