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GPA030A135MN-FDR
IGBT 1350V 60A 329W TO3PN
Mfr. Part Number
GPA030A135MN-FDR
Manufacturer
SemiQ
Datasheet
Description
IGBT 1350V 60A 329W TO3PN
RoHS Status
Lead Free / RoHS Complaint
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GPA030A135MN-FDR
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Specifications
Product Description
Purchase & Inquiry
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1350 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
90 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
Power - Max
329 W
Switching Energy
4.4mJ (on), 1.18mJ (off)
Input Type
Standard
Gate Charge
300 nC
Td (on/off) @ 25°C
30ns/145ns
Test Condition
600V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)
450 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PN
Brand Introduction

SemiQ designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors as well as 150mm SiC epitaxial wafers. SiC Diodes and MOSFETs are available in both discrete and module form factors as well as bare die and wafer form. SemiQ also offers power conversion application expertise which includes sub system design and semi custom modules.

SemiQ serves the following end markets: Electric Vehicle Chargers and Charging Stations; Power Factor Correction (PFC); Output Rectification; Power Supplies including Server Farms; Solar Panel Inverters, Welding, Medical Equipment; and Motor Drives. SemiQ's manufacturing and engineering facilities are located in Lake Forest, California. The company is uniquely positioned with a fully redundant SiC supply chain.

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