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IGP01N120H2
POWER BIPOLAR TRANSISTOR NPN
Mfr. Part Number
IGP01N120H2
Manufacturer
Infineon Technologies
Datasheet
Description
POWER BIPOLAR TRANSISTOR NPN
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
In Stock: 3,997
Unit Price
$0.5500
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Reference Price
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1$ 0.5500
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IGP01N120H2
Infineon Technologies
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Specifications
Product Description
Purchase & Inquiry
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
3.2 A
Current - Collector Pulsed (Icm)
3.5 A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 1A
Power - Max
28 W
Switching Energy
140µJ
Input Type
Standard
Gate Charge
8.6 nC
Td (on/off) @ 25°C
13ns/370ns
Test Condition
800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3-1
Brand Introduction

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

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