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RBN50H65T1FPQ-A0#CB0
ABU / IGBT
Mfr. Part Number
RBN50H65T1FPQ-A0#CB0
Manufacturer
Intersil (Renesas Electronics Corporation)
Datasheet
Description
ABU / IGBT
RoHS Status
Lead Free / RoHS Complaint
sample
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RBN50H65T1FPQ-A0#CB0
Intersil (Renesas Electronics Corporation)
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RBN50H65T1FPQ-A0#CB0
Intersil (Renesas Electronics Corporation)
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Specifications
Product Description
Purchase & Inquiry
IGBT Type
Trench
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
100 A
Current - Collector Pulsed (Icm)
-
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 50A
Power - Max
250 W
Switching Energy
830µJ (on), 670µJ (off)
Input Type
Standard
Gate Charge
36 nC
Td (on/off) @ 25°C
20ns/93ns
Test Condition
400V, 50A, 16Ohm, 15V
Reverse Recovery Time (trr)
65 ns
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247A
Brand Introduction
Effective January 1, 2018, Renesas and Intersil will operate as one unified enterprise, bringing about a significant expansion to the intrinsic capabilities of semiconductors. This combination unites the widely acclaimed Renesas MCU and SoC technologies with Intersil’s market-leading expertise in high performance power management and precision analog devices. In turn, this brings organic growth in the automotive, industrial and broad-based sectors, allowing the new enterprise to respond with greater speed to customers’ systems needs.

The union of Renesas with Intersil began with the completion of the acquisition on February 24, 2017, and the unified “One Global Renesas” went into operation across all markets the following July — bringing together the strengths of both organizations in anticipation of customer requirements in a rapidly changing market environment. This truly global organization offers a vast synergistic effect.

Join Renesas as it strengthens its leading position in the global semiconductor market.
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