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IGW25N120H3FKSA1
IGBT 1200V 50A 326W TO247-3
Mfr. Part Number
IGW25N120H3FKSA1
Manufacturer
Infineon Technologies
Datasheet
Description
IGBT 1200V 50A 326W TO247-3
RoHS Status
Lead Free / RoHS Complaint
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IGW25N120H3FKSA1
Infineon Technologies
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Specifications
Product Description
Purchase & Inquiry
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
50 A
Current - Collector Pulsed (Icm)
100 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 25A
Power - Max
326 W
Switching Energy
2.65mJ
Input Type
Standard
Gate Charge
115 nC
Td (on/off) @ 25°C
27ns/277ns
Test Condition
600V, 25A, 23Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-1
Brand Introduction

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

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