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GSID600A120S4B1
IGBT MOD 1200V 1130A 3060W
Mfr. Part Number
GSID600A120S4B1
Manufacturer
SemiQ
Datasheet
Description
IGBT MOD 1200V 1130A 3060W
RoHS Status
Lead Free / RoHS Complaint
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Specifications
Product Description
Purchase & Inquiry
IGBT Type
-
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
1130 A
Power - Max
3060 W
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 600A
Current - Collector Cutoff (Max)
1 mA
Input Capacitance (Cies) @ Vce
51 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Brand Introduction

SemiQ designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors as well as 150mm SiC epitaxial wafers. SiC Diodes and MOSFETs are available in both discrete and module form factors as well as bare die and wafer form. SemiQ also offers power conversion application expertise which includes sub system design and semi custom modules.

SemiQ serves the following end markets: Electric Vehicle Chargers and Charging Stations; Power Factor Correction (PFC); Output Rectification; Power Supplies including Server Farms; Solar Panel Inverters, Welding, Medical Equipment; and Motor Drives. SemiQ's manufacturing and engineering facilities are located in Lake Forest, California. The company is uniquely positioned with a fully redundant SiC supply chain.

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