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GSID200A170S3B1
IGBT MODULE 1200V 400A 1630W D3
Mfr. Part Number
GSID200A170S3B1
Manufacturer
SemiQ
Datasheet
Description
IGBT MODULE 1200V 400A 1630W D3
RoHS Status
Lead Free / RoHS Complaint
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Specifications
Product Description
Purchase & Inquiry
IGBT Type
-
Configuration
2 Independent
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
400 A
Power - Max
1630 W
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 200A
Current - Collector Cutoff (Max)
1 mA
Input Capacitance (Cies) @ Vce
26 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C
Mounting Type
Chassis Mount
Package / Case
D-3 Module
Supplier Device Package
D3
Brand Introduction

SemiQ designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors as well as 150mm SiC epitaxial wafers. SiC Diodes and MOSFETs are available in both discrete and module form factors as well as bare die and wafer form. SemiQ also offers power conversion application expertise which includes sub system design and semi custom modules.

SemiQ serves the following end markets: Electric Vehicle Chargers and Charging Stations; Power Factor Correction (PFC); Output Rectification; Power Supplies including Server Farms; Solar Panel Inverters, Welding, Medical Equipment; and Motor Drives. SemiQ's manufacturing and engineering facilities are located in Lake Forest, California. The company is uniquely positioned with a fully redundant SiC supply chain.

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