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GSID100A120T2P2
IGBT MOD 1200V 200A 710W
Mfr. Part Number
GSID100A120T2P2
Manufacturer
SemiQ
Datasheet
Description
IGBT MOD 1200V 200A 710W
RoHS Status
Lead Free / RoHS Complaint
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Specifications
Product Description
Purchase & Inquiry
IGBT Type
-
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
200 A
Power - Max
710 W
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 100A
Current - Collector Cutoff (Max)
1 mA
Input Capacitance (Cies) @ Vce
13.7 nF @ 25 V
Input
Three Phase Bridge Rectifier
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Brand Introduction

SemiQ designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors as well as 150mm SiC epitaxial wafers. SiC Diodes and MOSFETs are available in both discrete and module form factors as well as bare die and wafer form. SemiQ also offers power conversion application expertise which includes sub system design and semi custom modules.

SemiQ serves the following end markets: Electric Vehicle Chargers and Charging Stations; Power Factor Correction (PFC); Output Rectification; Power Supplies including Server Farms; Solar Panel Inverters, Welding, Medical Equipment; and Motor Drives. SemiQ's manufacturing and engineering facilities are located in Lake Forest, California. The company is uniquely positioned with a fully redundant SiC supply chain.

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