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APT10M11B2VFRG
MOSFET N-CH 100V 100A T-MAX
Mfr. Part Number
APT10M11B2VFRG
Manufacturer
Microsemi
Datasheet
Datasheet
Description
MOSFET N-CH 100V 100A T-MAX
RoHS Status
Lead Free / RoHS Complaint
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APT10M11B2VFRG
Microsemi
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APT10M11B2VFRG
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
450 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
10300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
T-MAX™
Package / Case
TO-247-3 Variant
Brand Introduction

Microsemi (Microchip Technology) - Microsemi Corporation was acquired by Microchip in May 2018. Microsemi offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal IC’s, FPGAs, SoCs, ASICs, power management products, timing, voice processing devices, discrete components, enterprise storage, and Power-over-Ethernet solutions.

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