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P3M12160K4
SICFET N-CH 1200V 19A TO-247-4
Mfr. Part Number
P3M12160K4
Manufacturer
PN Junction Semiconductor
Datasheet
Datasheet
Description
SICFET N-CH 1200V 19A TO-247-4
RoHS Status
Lead Free / RoHS Complaint
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P3M12160K4
PN Junction Semiconductor
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P3M12160K4
PN Junction Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
19A
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
192mOhm @ 10A, 15V
Vgs(th) (Max) @ Id
2.4V @ 2.5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
+21V, -8V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
110W
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Brand Introduction

PN Junction Semiconductor is a semiconductor power device enterprise (Fabless model), and established a strategic partnership with worldwide leading foundry X-FAB a fully automotive-qualified fab for more than 30 years that supports PNJ's silicon carbide power device in high quality. PNJ focusing on silicon carbide and gallium nitride power device design and product sales. Products include SiC SBD, SiC MOS, and GaN HEMT, and more. Their products are designed for servers and data center power supplies, new energy vehicles, smart grids, 5G Internet of Things, as well as others.

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