Home • Products • Discrete Semiconductor Products • Transistors - FETs, MOSFETs - Single • P3M12160K3
Purchase Protection

The products we promise to sell are guaranteed to be brand new, original and authentic products and provide 365-day warranty service.

Please contact our sales team or send the model and quantity you need to yingxinyuan@yxsmd.com. We will reply to your message as soon as possible. I hope we can cooperate happily in the future.

P3M12160K3
SICFET N-CH 1200V 19A TO-247-3
Mfr. Part Number
P3M12160K3
Manufacturer
PN Junction Semiconductor
Datasheet
Datasheet
Description
SICFET N-CH 1200V 19A TO-247-3
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
P3M12160K3
PN Junction Semiconductor
*Quantity:
*Contact Name
Contact Name is required
Company Name
*Email
Email is required
Phone
*Country
Country is required
Your Question
SUBMIT
In Stock: 9,538
Unit Price
$
Add To Cart
Add to RFQ
Reference Price
QuantityPrice
1$ 8.8300
Not the price you want?
Send RFQ Now and we'll contact you ASAP
Quick RFQ
* Mandatory Fields
P3M12160K3
PN Junction Semiconductor
*Quantity:
*Contact Name
Contact Name is required
Company Name
*Email
Email is required
Phone
*Country
Country is required
Your Question
Please send RFQ, we will response immediately
QUICK RFQ
Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
19A
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
192mOhm @ 10A, 15V
Vgs(th) (Max) @ Id
2.4V @ 2.5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
+21V, -8V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
110W
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3L
Package / Case
TO-247-3
Brand Introduction

PN Junction Semiconductor is a semiconductor power device enterprise (Fabless model), and established a strategic partnership with worldwide leading foundry X-FAB a fully automotive-qualified fab for more than 30 years that supports PNJ's silicon carbide power device in high quality. PNJ focusing on silicon carbide and gallium nitride power device design and product sales. Products include SiC SBD, SiC MOS, and GaN HEMT, and more. Their products are designed for servers and data center power supplies, new energy vehicles, smart grids, 5G Internet of Things, as well as others.

Similar Product
Related Categories
Evaluation   ( 0 )
I want to evaluation
*Email:
Rating:
Email is required
*Content
SUBMIT
Content is required