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P1H06300D8
GANFET N-CH 650V 10A DFN 8X8
Mfr. Part Number
P1H06300D8
Manufacturer
PN Junction Semiconductor
Datasheet
Description
GANFET N-CH 650V 10A DFN 8X8
RoHS Status
Lead Free / RoHS Complaint
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P1H06300D8
PN Junction Semiconductor
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P1H06300D8
PN Junction Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
10A
Drive Voltage (Max Rds On, Min Rds On)
6V
Rds On (Max) @ Id, Vgs
1.3V @ 1mA
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
55.5W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN8*8
Package / Case
-
Brand Introduction

PN Junction Semiconductor is a semiconductor power device enterprise (Fabless model), and established a strategic partnership with worldwide leading foundry X-FAB a fully automotive-qualified fab for more than 30 years that supports PNJ's silicon carbide power device in high quality. PNJ focusing on silicon carbide and gallium nitride power device design and product sales. Products include SiC SBD, SiC MOS, and GaN HEMT, and more. Their products are designed for servers and data center power supplies, new energy vehicles, smart grids, 5G Internet of Things, as well as others.

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