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G2K3N10G
N100V, 2.5A,RD<220M@10V,VTH1V~2V
Mfr. Part Number
G2K3N10G
Manufacturer
Goford Semiconductor
Datasheet
Description
N100V, 2.5A,RD<220M@10V,VTH1V~2V
RoHS Status
Lead Free / RoHS Complaint
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G2K3N10G
Goford Semiconductor
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G2K3N10G
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
220mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-89
Package / Case
TO-243AA
Brand Introduction

GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

Good lead time, reasonable pricing and strong technical support is how we get trust from the customers.

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