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G3404B
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
Mfr. Part Number
G3404B
Manufacturer
Goford Semiconductor
Datasheet
Description
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
RoHS Status
Lead Free / RoHS Complaint
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G3404B
Goford Semiconductor
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G3404B
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5.6A
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
22mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
526 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Brand Introduction

GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

Good lead time, reasonable pricing and strong technical support is how we get trust from the customers.

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