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BSS123
N-CH MOSFET 100V 0.2A SOT-23-3L
Mfr. Part Number
BSS123
Manufacturer
YANGJIE
Datasheet
Description
N-CH MOSFET 100V 0.2A SOT-23-3L
RoHS Status
Lead Free / RoHS Complaint
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BSS123
YANGJIE
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In Stock: 100,000
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BSS123
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3
Brand Introduction

Yangzhou Yangjie Electronic Technology Co., Ltd is one of the few outstanding IDM manufacturers in China which integrates discrete semiconductor chip design and production, semiconductor component assembly and test as well as market sales & services. We have a wide range of product lines including discrete semiconductor chips, diodes, bridge rectifiers, small signal, mosfets, power modules and SiC etc. This enables us to offer total product solution to our customers. Our products are widely used in power supply, home appliance, LED lighting, security, telecommunication, consumer electronics, green energy, industrial and automatic control, automotive electronics and other fields.

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