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FBG10N30BC
GAN FET HEMT100V30A COTS 4FSMD-B
Mfr. Part Number
FBG10N30BC
Manufacturer
EPC Space
Datasheet
Description
GAN FET HEMT100V30A COTS 4FSMD-B
RoHS Status
Lead Free / RoHS Complaint
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FBG10N30BC
EPC Space
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FBG10N30BC
EPC Space
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id
2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 5 V
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-SMD
Package / Case
4-SMD, No Lead
Brand Introduction

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride (GaN) power management solutions for space and other harsh environments. Radiation-hardened GaN-based power devices address critical space-borne environments for applications, including power supplies, light detection and ranging (lidar), motor drives, and ion thrusters. EPC Space has been delivering space-grade eGaN® discrete devices and modules since 2017. Their products have been in orbit since 2019, with tens of thousands of units on board satellites, including satellites flying in LEO and GEO orbit with mission lives of 10+ years.

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