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UF3C065040B3
MOSFET N-CH 650V 41A TO263
Mfr. Part Number
UF3C065040B3
Manufacturer
UnitedSiC
Datasheet
Datasheet
Description
MOSFET N-CH 650V 41A TO263
RoHS Status
Lead Free / RoHS Complaint
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UF3C065040B3
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
52mOhm @ 30A, 12V
Vgs(th) (Max) @ Id
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 15 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
176W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2Pak)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Brand Introduction

UnitedSiC is now Qorvo.

UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters and traction drives, as well as telecom/server power supplies variable speed motor drives and solar PV inverters.

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