UF3C065080K3S | Yingxinyuan Int'l(Group) Ltd

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UF3C065080K3S

MOSFET N-CH 650V 31A TO247-3

Mfr. Part Number

UF3C065080K3S

Manufacturer

UnitedSiC

Datasheet

Description

MOSFET N-CH 650V 31A TO247-3

RoHS Status

Lead Free / RoHS Complaint

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UF3C065080K3S

UnitedSiC

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UF3C065080K3S

UnitedSiC

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Technology

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Rds On (Max) @ Id, Vgs

100mOhm @ 20A, 12V

Vgs(th) (Max) @ Id

6V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

51 nC @ 15 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1500 pF @ 100 V

FET Feature

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Brand Introduction

UnitedSiC is now Qorvo.

UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters and traction drives, as well as telecom/server power supplies variable speed motor drives and solar PV inverters.