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RM2305B
MOSFET P-CH 20V 3A/4.1A SOT23
Mfr. Part Number
RM2305B
Manufacturer
Rectron USA
Datasheet
Description
MOSFET P-CH 20V 3A/4.1A SOT23
RoHS Status
Lead Free / RoHS Complaint
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RM2305B
Rectron USA
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RM2305B
Rectron USA
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Specifications
Product Description
Purchase & Inquiry
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
52mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
1.7W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3
Brand Introduction

Rectron Limited was established in 1976 by an experienced team of semiconductor engineers. Rectron quickly emerged as a recognized supplier of high-quality discrete semiconductors. In 1985, Rectron opened wholly owned subsidiaries in the USA, London and Hong Kong. They have since enhanced their competitive advantage and increased manufacturing capacity of discrete products.

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