CSD19536KTT | Yingxinyuan Int'l(Group) Ltd

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CSD19536KTT

MOSFET N-CH 100V 200A DDPAK

Mfr. Part Number

CSD19536KTT

Manufacturer

Texas Instruments

Datasheet

Description

MOSFET N-CH 100V 200A DDPAK

RoHS Status

Lead Free / RoHS Complaint

sample

Free Sample

In Stock: 560

Unit Price

$15.2174

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Reference Price

Quantity	Price
1	$ 15.2174
100	$ 12.1739
500	$ 10.1449

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CSD19536KTT

Texas Instruments

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

200A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

153 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12000 pF @ 50 V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DDPAK/TO-263-3

Package / Case

TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Brand Introduction

Texas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the world's brightest minds, TI creates innovations that shape the future of technology. TI is helping more than 100,000 customers transform the future, today.