UJ4C075023K4S | Yingxinyuan Int'l(Group) Ltd

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UJ4C075023K4S

750V/23MOHM, SIC, CASCODE, G4, T

Mfr. Part Number

UJ4C075023K4S

Manufacturer

UnitedSiC

Datasheet

Description

750V/23MOHM, SIC, CASCODE, G4, T

RoHS Status

Lead Free / RoHS Complaint

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UJ4C075023K4S

UnitedSiC

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UJ4C075023K4S

UnitedSiC

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

750 V

Current - Continuous Drain (Id) @ 25°C

66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Rds On (Max) @ Id, Vgs

29mOhm @ 40A, 12V

Vgs(th) (Max) @ Id

6V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

37.8 nC @ 15 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400 pF @ 400 V

FET Feature

Power Dissipation (Max)

306W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-4

Package / Case

TO-247-4

Brand Introduction

UnitedSiC is now Qorvo.

UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters and traction drives, as well as telecom/server power supplies variable speed motor drives and solar PV inverters.