UF3C120400K3S | Yingxinyuan Int'l(Group) Ltd

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UF3C120400K3S

SICFET N-CH 1200V 7.6A TO247-3

Mfr. Part Number

UF3C120400K3S

Manufacturer

UnitedSiC

Datasheet

Description

SICFET N-CH 1200V 7.6A TO247-3

RoHS Status

Lead Free / RoHS Complaint

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UF3C120400K3S

UnitedSiC

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UF3C120400K3S

UnitedSiC

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Technology

SiCFET (Cascode SiCJFET)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Rds On (Max) @ Id, Vgs

515mOhm @ 5A, 12V

Vgs(th) (Max) @ Id

6V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

27 nC @ 15 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

740 pF @ 100 V

FET Feature

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Brand Introduction

UnitedSiC is now Qorvo.

UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters and traction drives, as well as telecom/server power supplies variable speed motor drives and solar PV inverters.