STH275N8F7-2AG | Yingxinyuan Int'l(Group) Ltd

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STH275N8F7-2AG

MOSFET N-CH 80V 180A H2PAK-2

Mfr. Part Number

STH275N8F7-2AG

Manufacturer

STMicroelectronics

Datasheet

Description

MOSFET N-CH 80V 180A H2PAK-2

RoHS Status

Lead Free / RoHS Complaint

sample

Free Sample

In Stock: 9,935

Unit Price

$6.2400

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1	$ 6.2400

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STMicroelectronics

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80 V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

193 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13600 pF @ 50 V

FET Feature

-

Power Dissipation (Max)

315W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H2Pak-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Brand Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.