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CSD18509Q5B
MOSFET N-CH 40V 100A 8VSON
Mfr. Part Number
CSD18509Q5B
Manufacturer
Texas Instruments
Datasheet
Datasheet
Description
MOSFET N-CH 40V 100A 8VSON
RoHS Status
Lead Free / RoHS Complaint
sample
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CSD18509Q5B
Texas Instruments
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CSD18509Q5B
Texas Instruments
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13900 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 195W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-VSON-CLIP (5x6)
Package / Case
8-PowerTDFN
Brand Introduction
Texas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the world's brightest minds, TI creates innovations that shape the future of technology. TI is helping more than 100,000 customers transform the future, today.
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