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TSM280NB06LCR RLG
MOSFET N-CH 60V 7A/28A 8PDFN
Mfr. Part Number
TSM280NB06LCR RLG
Manufacturer
Taiwan Semiconductor
Datasheet
Description
MOSFET N-CH 60V 7A/28A 8PDFN
RoHS Status
Lead Free / RoHS Complaint
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TSM280NB06LCR RLG
Taiwan Semiconductor
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TSM280NB06LCR RLG
Taiwan Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
7A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
969 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 56W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (5.2x5.75)
Package / Case
8-PowerLDFN
Brand Introduction

Recognized for more than 40 years for its core competence in discrete power rectifiers, Taiwan Semiconductor has expanded its product portfolio to include trench schottkys, analog ICs, LED driver ICs, power transistors and MOSFETs, and now provides a complete solution from one source. Taiwan Semiconductor products are used in a vast array of applications in the electronics industry, including automotive, computer, consumer, industrial, telecom and photovoltaic.

Through strategic expansion of innovative manufacturing capabilities, and its focus on pioneering efficient semiconductor solutions, Taiwan Semiconductor is committed to being the right choice for a successful and lasting business relationship and offers these key advantages: Broad selection of semiconductor products from one source, Modern, efficient, and customer-oriented logistics processes, Maximum flexibility including customer specific requirements, Maximum level of quality and performance for customer applications.

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