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LND01K1-G

MOSFET N-CH 9V 330MA SOT23-5

Mfr. Part Number

LND01K1-G

Manufacturer

Microchip Technology

Datasheet

Description

MOSFET N-CH 9V 330MA SOT23-5

RoHS Status

Lead Free / RoHS Complaint

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LND01K1-G

Microchip Technology

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LND01K1-G

Microchip Technology

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

9 V

Current - Continuous Drain (Id) @ 25°C

330mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

1.4Ohm @ 100mA, 0V

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

Vgs (Max)

+0.6V, -12V

Input Capacitance (Ciss) (Max) @ Vds

46 pF @ 5 V

FET Feature

Depletion Mode

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-25°C ~ 125°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-5

Package / Case

SC-74A, SOT-753

Brand Introduction

Microchip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.