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NTE4151PT1G
MOSFET P-CH 20V 760MA SC89-3
Mfr. Part Number
NTE4151PT1G
Manufacturer
onsemi
Datasheet
Description
MOSFET P-CH 20V 760MA SC89-3
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
In Stock: 500
Unit Price
$0.2250
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Reference Price
QuantityPrice
1$ 0.2250
100$ 0.1800
500$ 0.1500
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NTE4151PT1G
onsemi
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Specifications
Product Description
Purchase & Inquiry
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
760mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
360mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.1 nC @ 4.5 V
Vgs (Max)
±6V
Input Capacitance (Ciss) (Max) @ Vds
156 pF @ 5 V
FET Feature
-
Power Dissipation (Max)
313mW (Tj)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-89-3
Package / Case
SC-89, SOT-490
Brand Introduction
onsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
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