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UF3SC120009K4S
SICFET N-CH 1200V 120A TO247-4
Mfr. Part Number
UF3SC120009K4S
Manufacturer
UnitedSiC
Datasheet
Datasheet
Description
SICFET N-CH 1200V 120A TO247-4
RoHS Status
Lead Free / RoHS Complaint
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UF3SC120009K4S
UnitedSiC
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
11mOhm @ 100A, 12V
Vgs(th) (Max) @ Id
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
234 nC @ 15 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8512 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
789W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Brand Introduction

UnitedSiC is now Qorvo.

UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters and traction drives, as well as telecom/server power supplies variable speed motor drives and solar PV inverters.

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