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NVBG020N090SC1
SICFET N-CH 900V 9.8A/112A D2PAK
Mfr. Part Number
NVBG020N090SC1
Manufacturer
onsemi
Datasheet
Description
SICFET N-CH 900V 9.8A/112A D2PAK
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
In Stock: 8,993
Unit Price
$52.8300
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Reference Price
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1$ 52.8300
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onsemi
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
9.8A (Ta), 112A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 15 V
Vgs (Max)
+19V, -10V
Input Capacitance (Ciss) (Max) @ Vds
4415 pF @ 450 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 477W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Brand Introduction
onsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
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